Invention Grant
US09251059B2 Storage system employing MRAM and redundant array of solid state disk
有权
采用MRAM和固态硬盘冗余阵列的存储系统
- Patent Title: Storage system employing MRAM and redundant array of solid state disk
- Patent Title (中): 采用MRAM和固态硬盘冗余阵列的存储系统
-
Application No.: US13858875Application Date: 2013-04-08
-
Publication No.: US09251059B2Publication Date: 2016-02-02
- Inventor: Siamack Nemazie , Ngon Van Le , Anilkumar Mandapuram
- Applicant: Avalanche Technology, Inc.
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Maryam Imam; Bing K. Yen
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02 ; G06F12/08 ; G06F11/10
Abstract:
A storage system includes one or more RAID groups, a RAID group comprising a number of physically addressed solid state disks (paSSD). Stripes are formed across a RAID group, data to be written is saved in a non-volatile buffer until enough data for a full strip is received (without any restriction about logical address of data), full stripes are sent and written to paSSDs comprising the RAID group, accordingly the partial stripe read-modify-write is avoided.
Public/Granted literature
- US20140281142A1 Storage System Employing MRAM and Redundant Array of Solid State Disk Public/Granted day:2014-09-18
Information query
