Invention Grant
- Patent Title: Semiconductor memory device and body bias method thereof
- Patent Title (中): 半导体存储器件及其体偏置方法
-
Application No.: US14246685Application Date: 2014-04-07
-
Publication No.: US09251866B2Publication Date: 2016-02-02
- Inventor: Kichul Chun
- Applicant: Kichul Chun
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0041169 20130415
- Main IPC: G11C5/14
- IPC: G11C5/14 ; H03K19/003 ; H03K19/00 ; H01L27/092 ; G05F3/20 ; H02M3/07 ; G11C29/02

Abstract:
A semiconductor memory device is provided which includes a function block including a plurality of transistors; a body bias control unit configured to detect a command and to generate a body bias selection signal according to the detection result; and a body bias generator configured to generate a body voltage according to the body bias selection signal and to provide the body voltage to bodies of the plurality of transistors, wherein the body bias generator down-converts a power supply voltage supplied from an external device to generate the body voltage.
Public/Granted literature
- US20140307513A1 SEMICONDUCTOR MEMORY DEVICE AND BODY BIAS METHOD THEREOF Public/Granted day:2014-10-16
Information query