Invention Grant
- Patent Title: Single phase GSHE-MTJ non-volatile flip-flop
- Patent Title (中): 单相GSHE-MTJ非易失性触发器
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Application No.: US14498376Application Date: 2014-09-26
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Publication No.: US09251883B2Publication Date: 2016-02-02
- Inventor: Wenqing Wu , Kendrick Hoy Leong Yuen , Karim Arabi
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G11C11/18
- IPC: G11C11/18 ; G11C11/16 ; G11C14/00 ; H03K19/18 ; H03K3/356 ; H03K3/59 ; H03K3/3562

Abstract:
Systems and methods are directed to a single-phase non-volatile flip-flop (NVFF), which includes a master stage formed from a dual giant spin Hall effect (GSHE)-magnetic tunnel junction (MTJ) structure, the dual GSHE-MTJ structure comprising a first GSHE-MTJ and a second GSHE-MTJ coupled between a first combined terminal and a second combined terminal, and a slave stage formed from a first inverter coupled to a second inverter. During a single clock cycle of a clock, a first data value is read out from the slave stage when a clock is in a high state and a second data value is written into the master stage, when the clock is in a low state. The first and second inverters are cross coupled in a latch configuration to hold the first data value as an output, when the clock is in the low state.
Public/Granted literature
- US20150213869A1 SINGLE-PHASE GSHE-MTJ NON-VOLATILE FLIP-FLOP Public/Granted day:2015-07-30
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