Invention Grant
- Patent Title: Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence
- Patent Title (中): 基于由压电剩磁产生的压阻应变的非易失性压电记忆
-
Application No.: US14222813Application Date: 2014-03-24
-
Publication No.: US09251884B2Publication Date: 2016-02-02
- Inventor: Bruce G. Elmegreen , Glenn J. Martyna , Dennis M. Newns , Alejandro G. Schrott
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G11C13/00
Abstract:
A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material.
Public/Granted literature
- US20150269984A1 NON-VOLATILE, PIEZOELECTRONIC MEMORY BASED ON PIEZORESISTIVE STRAIN PRODUCED BY PIEZOELECTRIC REMANENCE Public/Granted day:2015-09-24
Information query
