Accessing a resistive memory storage device
Abstract:
Embodiments of the present disclosure describe a device and methods of accessing the device. The device can include a plurality of memory cells, each cell including a plurality of resistive memory components each designed to store data as resistance and an access transistor configured to control access to the plurality of resistive memory components. A wordline is configured to enable access to the set of resistor memory components by enabling the access transistor. A plurality of bitlines are each connected to a respective and different set of resistive memory components from each of the plurality of memory cells. A bitline controller is configured to access the plurality of resistive memory components by applying a first voltage to a first set of the plurality of bitlines and a second voltage to a second set of bitlines.
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