Invention Grant
US09251898B2 Method for programming nonvolatile memory element, method for initializing nonvolatile memory element, and nonvolatile memory device
有权
非易失性存储元件的编程方法，非易失性存储元件的初始化方法以及非易失性存储器件
- Patent Title: Method for programming nonvolatile memory element, method for initializing nonvolatile memory element, and nonvolatile memory device
- Patent Title (中): 非易失性存储元件的编程方法，非易失性存储元件的初始化方法以及非易失性存储器件
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Application No.: US13983855Application Date: 2012-02-07
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Publication No.: US09251898B2Publication Date: 2016-02-02
- Inventor: Koji Katayama , Takeshi Takagi
- Applicant: Koji Katayama , Takeshi Takagi
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2011-027704 20110210
- International Application: PCT/JP2012/000809 WO 20120207
- International Announcement: WO2012/108185 WO 20120816
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L27/10 ; H01L27/102 ; H01L49/02 ; H01L45/00 ; H01L27/24 ; G11C29/50
Abstract:
A method for programming a nonvolatile memory element includes: decreasing a resistance value of a variable resistance element in an initial state, by applying an initialization voltage pulse to a series circuit in which a load resistor having a first resistance value is connected in series with the variable resistance element and a MSM diode; applying, after the decreasing, a write voltage pulse to the series circuit after the resistance value of the variable resistance element is changed to a second resistance value lower than the first resistance value; and applying, after the decreasing, an erase voltage pulse to the series circuit after the resistance value of the variable resistance element is changed to a third resistance value lower than the first resistance value.
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