Invention Grant
- Patent Title: Method of making field emitter
- Patent Title (中): 制作场发射器的方法
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Application No.: US14738949Application Date: 2015-06-15
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Publication No.: US09251989B2Publication Date: 2016-02-02
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201410269167 20140617
- Main IPC: H01J9/02
- IPC: H01J9/02 ; B82Y99/00 ; B82Y40/00

Abstract:
A method of making a field emitter includes following steps. A carbon nanotube layer is provided, and the carbon nanotube layer includes a first surface and a second surface opposite to each other. A carbon nanotube composite layer is formed via electroplating a first metal layer on the first surface and electroplating a second metal layer on the second surface. A first carbon nanotube layer and a second carbon nanotube layer is formed by separating apart the carbon nanotube composite layer, wherein a fracture surface is formed in the carbon nanotube composite layer, a number of first carbon nanotubes in the first carbon nanotube layer are exposed from the fracture surface, and a number of second carbon nanotubes in the second carbon nanotube layer are exposed from the fracture surface.
Public/Granted literature
- US20150364287A1 METHOD OF MAKING FIELD EMITTER Public/Granted day:2015-12-17
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