A method used for processing a structure in manufacturing of a semiconductor device may include polishing the structure to form a polished structure. The polished structure may include a metal member, a dielectric layer that contacts the metal member, and a particle that contacts at least one of the metal member and the dielectric layer. The method may further include applying an organic acid to the polished structure to remove at least a portion of the particle. The particle may be substantially removed, such that satisfactory quality of the semiconductor may be provided.