Invention Grant
- Patent Title: Method for forming a layer on a substrate at low temperatures
- Patent Title (中): 在低温下在基材上形成层的方法
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Application No.: US14131943Application Date: 2012-07-12
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Publication No.: US09252011B2Publication Date: 2016-02-02
- Inventor: Juergen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
- Applicant: Juergen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
- Applicant Address: DE Blaubeuren
- Assignee: Centrotherm Photovoltaics AG
- Current Assignee: Centrotherm Photovoltaics AG
- Current Assignee Address: DE Blaubeuren
- Agency: Tarolli, Sundheim, Covell & Tummino LLP
- Priority: DE102011107072 20110712
- International Application: PCT/EP2012/002947 WO 20120712
- International Announcement: WO2013/007389 WO 20130117
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/02 ; C23C8/10 ; C23C8/36 ; C23C8/38 ; H01J37/32 ; H01L21/67 ; H01L31/0216 ; H01L31/18
Abstract:
A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.
Public/Granted literature
- US20140179117A1 METHOD FOR FORMING A LAYER ON A SUBSTRATE AT LOW TEMPERATURES Public/Granted day:2014-06-26
Information query
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