An ultra-shallow junction semiconductor field-effect transistor and its methods of making are disclosed. In the present disclosure, a mixture film is formed on a semiconductor substrate with a gate structure formed thereon using a physical vapor deposition (PVD) process, which employs a mixture of metal and semiconductor dopants as a target. The PVD process is followed by annealing, during which ultra-shallow junctions and ultra-thin metal silicide are formed. After removing the mixture film remaining on the semiconductor substrate, an ultra-shallow junction semiconductor field-effect transistor is formed. Because the mixture film comprises metal and semiconductor dopants, ultra-shallow junctions and ultra-thin metal silicide can be formed in a same annealing process. The ultra-shallow junction thus formed can be used in semiconductor field-effect transistors for the 14 nm, 11 nm, or even further technology node.