Invention Grant
- Patent Title: Semiconductor device and method for forming the same
- Patent Title (中): 半导体装置及其形成方法
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Application No.: US13222502Application Date: 2011-08-31
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Publication No.: US09252019B2Publication Date: 2016-02-02
- Inventor: Wen-Chi Tsai , Chia-Han Lai , Yung-Chung Chen , Mei-Yun Wang , Chii-Ming Wu , Fang-Cheng Chen , Huang-Ming Chen , Ming-Ta Lei
- Applicant: Wen-Chi Tsai , Chia-Han Lai , Yung-Chung Chen , Mei-Yun Wang , Chii-Ming Wu , Fang-Cheng Chen , Huang-Ming Chen , Ming-Ta Lei
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L29/417 ; H01L21/02 ; H01L29/66
Abstract:
A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.
Public/Granted literature
- US20130049219A1 Semiconductor Device and Method for Forming the Same Public/Granted day:2013-02-28
Information query
IPC分类:
