Invention Grant
- Patent Title: Method for manufacturing a composite wafer having a graphite core
- Patent Title (中): 具有石墨芯的复合晶片的制造方法
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Application No.: US13776796Application Date: 2013-02-26
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Publication No.: US09252045B2Publication Date: 2016-02-02
- Inventor: Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/31 ; H01L21/469 ; H01L21/762 ; H01L29/02 ; H01L29/16 ; H01L21/02
Abstract:
A composite wafer including a carrier substrate having a graphite core and a monocrystalline semiconductor substrate or layer attached to the carrier substrate and a corresponding method for manufacturing such a composite wafer is provided.
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