Invention Grant
- Patent Title: Semiconductor device, circuit substrate, and electronic device
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Application No.: US14584591Application Date: 2014-12-29
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Publication No.: US09252082B2Publication Date: 2016-02-02
- Inventor: Yoshihide Matsuo
- Applicant: Seiko Epson Corporation
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2009-238600 20091015
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/683 ; H01L21/768 ; H01L23/538
Abstract:
A semiconductor device has a through electrode formed in a through hole which penetrates a Si substrate from one surface to the other surface of the Si substrate, wherein a rectangular electrode pad is provided on the other surface with an insulation film laid between the electrode pad and the other surface, an opening of the through hole on the one surface side is circular, an opening of the through hole on the other surface side is rectangular, and the area of the opening on the other surface side is made smaller than the area of the opening on the one surface side.
Public/Granted literature
- US20150108614A1 SEMICONDUCTOR DEVICE, CIRCUIT SUBSTRATE, AND ELECTRONIC DEVICE Public/Granted day:2015-04-23
Information query
IPC分类:
