Invention Grant
- Patent Title: Semiconductor device having penetrating electrodes each penetrating through semiconductor chip
- Patent Title (中): 具有穿透半导体芯片的贯通电极的半导体装置
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Application No.: US13827514Application Date: 2013-03-14
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Publication No.: US09252091B2Publication Date: 2016-02-02
- Inventor: Akira Ide
- Applicant: PS4 Luxco S.a.r.l.
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2012-064108 20120321
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/48 ; H01L23/544 ; H01L25/065 ; H01L23/31
Abstract:
Disclosed herein is a device that includes: a semiconductor substrate; plurality of first through-substrate vias each penetrating through the semiconductor substrate, a plurality of second through-substrate vias each penetrating through the semiconductor substrate, an insulating film formed over the semiconductor substrate, the insulating film including a first opening and a plurality of second openings, the first opening being located over the first through-substrate vias, and each of the second openings being located over a corresponding one of the second through-substrate vias.
Public/Granted literature
- US20130249085A1 SEMICONDUCTOR DEVICE HAVING PENETRATING ELECTRODES EACH PENETRATING THROUGH SEMICONDUCTOR CHIP Public/Granted day:2013-09-26
Information query
IPC分类:
