Invention Grant
US09252108B2 Semiconductor device having magnetic shield layer surrounding MRAM chip
有权
具有围绕MRAM芯片的磁屏蔽层的半导体器件
- Patent Title: Semiconductor device having magnetic shield layer surrounding MRAM chip
- Patent Title (中): 具有围绕MRAM芯片的磁屏蔽层的半导体器件
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Application No.: US14140393Application Date: 2013-12-24
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Publication No.: US09252108B2Publication Date: 2016-02-02
- Inventor: Takeshi Fujimori
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2013-197033 20130924
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L23/552 ; H01L25/065 ; H01L27/22
Abstract:
According to one embodiment, a semiconductor device includes a MRAM chip including a semiconductor substrate and a memory cell array area includes magnetoresistive elements which are provided on the semiconductor substrate, and a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.
Public/Granted literature
- US20150084141A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-03-26
Information query
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