Invention Grant
- Patent Title: Stacked semiconductor device and fabrication method for same
- Patent Title (中): 堆叠的半导体器件及其制造方法相同
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Application No.: US13540233Application Date: 2012-07-02
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Publication No.: US09252125B2Publication Date: 2016-02-02
- Inventor: Yutaka Kagaya , Hidehiro Takeshima , Masamichi Ishihara
- Applicant: Yutaka Kagaya , Hidehiro Takeshima , Masamichi Ishihara
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Priority: JP2006-113529 20060417
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/00 ; H01L25/065 ; H01L25/10 ; H01L23/31

Abstract:
A stacked semiconductor device is constructed by stacking in two levels: a lower semiconductor device having a wiring board, at least one semiconductor chip mounted on a first surface of the wiring board and having electrodes electrically connected to wiring by way of a connection means, an encapsulant composed of insulating plastic that covers the semiconductor chip and the connection means, a plurality of electrodes formed overlying the wiring of a second surface of the wiring board, and a plurality of linking interconnects each having a portion connected to the wiring of the first surface of the wiring board and another portion exposed on the surface of the encapsulant; and an upper semiconductor device in which each electrode overlies and is electrically connected to the exposed portions of each of the linking interconnects of the lower semiconductor device.
Public/Granted literature
- US20130001755A1 STACKED SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR SAME Public/Granted day:2013-01-03
Information query
IPC分类: