Invention Grant
US09252146B2 Work function adjustment by carbon implant in semiconductor devices including gate structure
有权
通过碳植入在包括栅极结构的半导体器件中进行功能调整
- Patent Title: Work function adjustment by carbon implant in semiconductor devices including gate structure
- Patent Title (中): 通过碳植入在包括栅极结构的半导体器件中进行功能调整
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Application No.: US14280751Application Date: 2014-05-19
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Publication No.: US09252146B2Publication Date: 2016-02-02
- Inventor: Yue Liang , Dechao Guo , William K. Henson , Shreesh Narasimha , Yanfeng Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers, Esq.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/12 ; H01L21/00 ; H01L21/425 ; H01L27/092 ; H01L21/8238 ; H01L21/265 ; H01L21/28 ; H01L29/10 ; H01L29/51
Abstract:
A device including a p-type semiconductor device and an n-type semiconductor device on a semiconductor substrate. The n-type semiconductor device includes a gate structure having a high-k gate dielectric. A carbon dopant in a concentration ranging from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 is present at an interface between the high-k gate dielectric of the gate structure for the n-type semiconductor device and the semiconductor substrate. Methods of forming the aforementioned device are also disclosed.
Public/Granted literature
- US20140246727A1 WORK FUNCTION ADJUSTMENT BY CARBON IMPLANT IN SEMICONDUCTOR DEVICES INCLUDING GATE STRUCTURE Public/Granted day:2014-09-04
Information query
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