Invention Grant
- Patent Title: Solid-state imaging device and line sensor
- Patent Title (中): 固态成像装置和线传感器
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Application No.: US14188818Application Date: 2014-02-25
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Publication No.: US09252170B2Publication Date: 2016-02-02
- Inventor: Ken Tomita
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-154542 20130725
- Main IPC: H01L27/148
- IPC: H01L27/148 ; H01L27/146
Abstract:
Certain embodiments provide a solid-state imaging device including a pixel portion, a charge storage portion, a first transfer gate portion, a charge detecting portion, a second transfer gate portion, and an offset gate portion. The charge storage portion stores the electrical charges generated in the pixel portion. The first transfer gate portion transfers electrical charges from the pixel portion to the charge storage portion, and the second transfer gate portion transfers the electrical charges from the charge storage portion to the charge detecting portion. The offset gate portion is provided between the second transfer gate portion and the charge detecting portion and is applied with a predetermined constant voltage. This offset gate portion includes an offset gate layer that has a plurality of projections formed at positions adjacent to the second transfer gate portion and an offset gate electrode.
Public/Granted literature
- US20150028392A1 SOLID-STATE IMAGING DEVICE AND LINE SENSOR Public/Granted day:2015-01-29
Information query
IPC分类:
