A method of fabricating a semiconductor device is provided. The method includes an intermediate pattern structure on a substrate. The intermediate pattern structure includes a pair of first conductive lines extending in a first direction, a pair of first conductive connectors connecting end portions the pair of first conductive lines to each other, a pair of second conductive lines intersecting the pair of first conductive lines, and a pair of second conductive connectors connecting end portions of the pair of second conductive lines to each other. The first and second conductive connectors are selectively removed using a cut mask pattern to separate the pair of first conductive lines from each other and to separate the pair of second conductive lines from each other.