The present invention provides an integrated inductor and an integrated inductor fabricating method. The integrated inductor comprises: a semiconductor substrate, a plurality of deep trenches, and an inductor. The deep trenches are formed in the semiconductor substrate and arranged in a specific pattern, and the deep trenches are filled with a metal material to form a patterned ground shield (PGS). The inductor is formed above the semiconductor substrate. The integrated inductor fabricating method comprises: forming a semiconductor substrate; forming a plurality of deep trenches in the semiconductor substrate and arranging the deep trenches in a specific pattern; filling the deep trenches with a metal material to form a patterned ground shield (PGS); and forming an inductor above the semiconductor substrate.