Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14522481Application Date: 2014-10-23
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Publication No.: US09252200B2Publication Date: 2016-02-02
- Inventor: Shinpei Watanabe , Shinichi Uchida , Tadashi Maeda , Shigeru Tanaka
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-232024 20131108
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H04B5/00 ; H01L23/522 ; H01L23/64 ; H01L27/06 ; H01L23/495 ; H01L23/00 ; H01L23/62 ; H01L23/31

Abstract:
In a first semiconductor chip, a first multilayer interconnect layer is formed on a first substrate, and a first inductor is formed in the first multilayer interconnect layer. In a second semiconductor chip, a second multilayer interconnect layer is formed on a second substrate. A second inductor is formed in the second multilayer interconnect layer. The first semiconductor chip and the second semiconductor chip overlap each other in a direction in which the first multilayer interconnect layer and the second multilayer interconnect layer face each other. In addition, the first inductor and the second inductor overlap each other when seen in a plan view. At least one end of a first insulating film does not overlap the end of a facing region, in a Y direction.
Public/Granted literature
- US20150130022A1 Semiconductor Device Public/Granted day:2015-05-14
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