Invention Grant
- Patent Title: Metal insulator metal (MIM) capacitor structure
- Patent Title (中): 金属绝缘体金属(MIM)电容器结构
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Application No.: US13233752Application Date: 2011-09-15
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Publication No.: US09252204B2Publication Date: 2016-02-02
- Inventor: James W. Adkisson , Panglijen Candra , Kevin N. Ogg , Anthony K. Stamper
- Applicant: James W. Adkisson , Panglijen Candra , Kevin N. Ogg , Anthony K. Stamper
- Applicant Address: US KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: US KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony J. Canale
- Main IPC: H01L49/02
- IPC: H01L49/02

Abstract:
A MIM capacitor includes a dielectric cap that enhances performance and reduces damage to MIM insulators during manufacture. A cavity is formed in an insulative substrate, such as a back end of line dielectric layer, and a first metal layer and an insulator layer are conformally deposited. A second metal layer may be deposited conformally and/or to fill a remaining portion of the cavity. The dielectric cap may be an extra layer of insulative material deposited at ends of the insulator at an opening of the cavity and may also be formed as part of the insulator layer.
Public/Granted literature
- US20130069199A1 METAL INSULATOR METAL (MIM) CAPACITOR STRUCTURE Public/Granted day:2013-03-21
Information query
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