Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14714226Application Date: 2015-05-15
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Publication No.: US09252211B2Publication Date: 2016-02-02
- Inventor: Masao Uchida , Osamu Kusumoto , Nobuyuki Horikawa
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-110025 20140528
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/745 ; H01L21/00 ; H01L21/338 ; H01L29/06 ; H01L27/06 ; H01L29/872
Abstract:
A semiconductor device includes a first silicon carbide semiconductor layer of a first conductive type that is positioned on a front surface of a substrate of the first conductive type, a transistor region that includes transistor cells, a Schottky region, and a boundary region. The boundary region includes a second body region and a gate connector that is arranged on the second body region via an insulating film and electrically connected with a gate electrode. The Schottky region includes a Schottky electrode that is arranged on the first silicon carbide semiconductor layer.
Public/Granted literature
- US20150349051A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-12-03
Information query
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