Invention Grant
- Patent Title: Semiconductor device having a buried gate
- Patent Title (中): 具有掩埋栅极的半导体器件
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Application No.: US14531778Application Date: 2014-11-03
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Publication No.: US09252223B2Publication Date: 2016-02-02
- Inventor: Tae O Jung
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2011-0147019 20111230
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/423 ; H01L27/02 ; H01L27/108 ; H01L21/762 ; H01L27/088 ; H01L29/06
Abstract:
A semiconductor device and a method for manufacturing the same are disclosed, in which a buried gate region is formed, a nitride film spacer is formed at sidewalls of the buried gate region, and the spacer is etched in an active region in such a manner that the spacer remains in a device isolation region. Thus, if a void occurs in the device isolation region, the spacer can prevent a short-circuit from occurring between the device isolation region and its neighboring gates.
Public/Granted literature
- US20150061004A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-03-05
Information query
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