Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14055446Application Date: 2013-10-16
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Publication No.: US09252230B2Publication Date: 2016-02-02
- Inventor: Min Sung Ko
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0077930 20130703
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/66 ; H01L27/115 ; H01L21/28
Abstract:
A semiconductor device and a method of manufacturing the same are provided. The device includes insulating patterns and conductive patterns stacked alternately, a channel layer formed through the insulating patterns and the conductive patterns, a tunnel insulating layer formed to surround sidewalls of the channel layer, and a charge storage layer formed to surround the tunnel insulating layer. An interfacial surface of the tunnel insulating layer in contact with the charge storage layer includes a thermal oxide layer.
Public/Granted literature
- US20150008508A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-01-08
Information query
IPC分类:
