Semiconductor structure and manufacturing method for the same

Invention Grant

US09252231B2 Semiconductor structure and manufacturing method for the same 有权

Title translation: 半导体结构及制造方法相同

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Patent Title: Semiconductor structure and manufacturing method for the same
Patent Title (中): 半导体结构及制造方法相同
Application No.: US14301414

Application Date: 2014-06-11
Publication No.: US09252231B2

Publication Date: 2016-02-02
Inventor: Erh-Kun Lai
Applicant: Macronix International Co., Ltd.
Applicant Address: TW Hsinchu
Assignee: MACRONIX INTERNATIONAL CO., LTD.
Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
Current Assignee Address: TW Hsinchu
Agency: McClure, Qualey & Rodack, LLP
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L29/51 ; H01L29/792 ; H01L27/115 ; H01L23/528 ; H01L29/66 ; H01L21/311 ; H01L29/423 ; H01L21/28

Semiconductor structure and manufacturing method for the same

Abstract:

A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a conductive layer, a conductive architecture and a dielectric layer. The conductive layer defines adjacent first openings. The conductive architecture surrounds a portion of the conductive layer between the first openings. The dielectric layer separates the conductive layer and the conductive architecture.

Abstract(Chinese):

提供了一种半导体结构及其制造方法。半导体结构包括导电层，导电结构和电介质层。导电层限定相邻的第一开口。导电结构围绕第一开口之间的导电层的一部分。电介质层分离导电层和导电结构。

Public/Granted literature

US20150364564A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2015-12-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）