Invention Grant
US09252234B2 Partially-blocked well implant to improve diode ideality with SiGe anode
有权
部分阻塞良好的植入，以提高SiGe阳极的二极管理想性
- Patent Title: Partially-blocked well implant to improve diode ideality with SiGe anode
- Patent Title (中): 部分阻塞良好的植入，以提高SiGe阳极的二极管理想性
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Application No.: US13605290Application Date: 2012-09-06
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Publication No.: US09252234B2Publication Date: 2016-02-02
- Inventor: Dechao Guo , Wilfried E. Haensch , Gan Wang , Yanfeng Wang , Xin Wang
- Applicant: Dechao Guo , Wilfried E. Haensch , Gan Wang , Yanfeng Wang , Xin Wang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/66 ; H01L29/739 ; H01L29/165 ; H01L21/425 ; H01L29/16
Abstract:
A method of manufacturing a semiconductor device is disclosed. A p-type substrate is doped to form an N-well in a selected portion of a p-type substrate adjacent an anode region of the substrate. A p-type doped region is formed in the anode region of the p-type substrate. The p-type doped region and the N-well form a p-n junction.
Public/Granted literature
- US20140065807A1 PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe ANODE Public/Granted day:2014-03-06
Information query
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