A methodology for spacer-last replacement metal gate (RMG) flow that exhibits reduced variability, and the resulting device are disclosed. Embodiments may include forming a dummy gate stack comprising a dummy nitride portion on a dummy oxide portion on a substrate, forming source/drain regions in the substrate at opposite sides of the dummy gate stack, depositing an insulating material over the source/drain regions, coplanar with the dummy gate stack, and replacing the dummy gate stack with a metal gate stack and spacers.