Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same, and power supply apparatus
- Patent Title (中): 半导体装置及其制造方法以及电源装置
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Application No.: US13655673Application Date: 2012-10-19
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Publication No.: US09252254B2Publication Date: 2016-02-02
- Inventor: Sanae Shimizu , Atsushi Yamada
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/423 ; H01L29/66 ; H01L29/20 ; H01L29/51
Abstract:
A semiconductor device includes a substrate; a first nitride semiconductor layer provided over the substrate and having a nitride-polar surface; a gate electrode provided over the first nitride semiconductor layer; and a semiconductor layer provided on the first nitride semiconductor layer and only under the gate electrode, and exhibiting a polarization.
Public/Granted literature
- US20130077352A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS Public/Granted day:2013-03-28
Information query
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