Invention Grant
US09252262B2 Semiconductor device including semiconductor chip having epitaxial layer
有权
包括具有外延层的半导体芯片的半导体器件
- Patent Title: Semiconductor device including semiconductor chip having epitaxial layer
- Patent Title (中): 包括具有外延层的半导体芯片的半导体器件
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Application No.: US14590937Application Date: 2015-01-06
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Publication No.: US09252262B2Publication Date: 2016-02-02
- Inventor: Satoshi Eguchi , Yoshito Nakazawa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2014-003504 20140110
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/38 ; H01L29/739 ; H01L29/78 ; H01L29/861 ; H01L29/06 ; H01L29/165 ; H01L29/16 ; H01L21/265 ; H01L29/66 ; H01L29/08 ; H01L29/10
Abstract:
The reliability of a semiconductor device including a power semiconductor element is improved. The basic idea in embodiments is to make the band gap of a cell region smaller than the band gap of a peripheral region. Specifically, a lower band gap region having a smaller band gap than the band gap of an epitaxial layer is formed in the cell region. In addition, a higher band gap region having a larger band gap than the band gap of the epitaxial layer is formed in the peripheral region.
Public/Granted literature
- US20150200293A1 Semiconductor Device Public/Granted day:2015-07-16
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