Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US13070108Application Date: 2011-03-23
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Publication No.: US09252291B2Publication Date: 2016-02-02
- Inventor: Jun Fujiki , Naoki Yasuda , Daisuke Matsushita
- Applicant: Jun Fujiki , Naoki Yasuda , Daisuke Matsushita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-207800 20100916
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/792 ; G11C16/04 ; H01L27/115
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device includes a first memory portion. The first memory portion includes a first base semiconductor layer, a first electrode, a first channel semiconductor layer, a first base tunnel insulating film, a first channel tunnel insulating, a first charge retention layer and a first block insulating film. The first channel semiconductor layer is provided between the first base semiconductor layer and the first electrode, and includes a first channel portion. The first base tunnel insulating film is provided between the first base semiconductor layer and the first channel semiconductor layer. The first channel tunnel insulating film is provided between the first electrode and the first channel portion. The first charge retention layer is provided between the first electrode and the first channel tunnel insulating film. The first block insulating film is provided between the first electrode and the first charge retention layer.
Public/Granted literature
- US20120068159A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-03-22
Information query
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