Invention Grant
- Patent Title: Semiconductor device with compressive layers
- Patent Title (中): 具有压缩层的半导体器件
-
Application No.: US14713559Application Date: 2015-05-15
-
Publication No.: US09252296B2Publication Date: 2016-02-02
- Inventor: Chun-Han Tsao , Chih-Yu Lai , Chih-Hui Huang , Cheng-Ta Wu , Yeur-Luen Tu , Ching-Chun Wang , Shyh-Fann Ting , Chia-Shiung Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L21/00 ; H01L31/0216 ; H01L51/42 ; H01L27/146 ; H01L27/148
Abstract:
A semiconductor device includes a substrate having a first side and a second side opposite the first side. The substrate has a sensor region proximate the first side. The semiconductor device also includes a first compressive layer over the second side of the substrate. The semiconductor device further includes a light blocking element over the first compressive layer. The semiconductor device additionally includes a second compressive layer over the first compressive layer and covering a portion of the light blocking element. The semiconductor device also includes a third compressive layer between the second compressive layer and the portion of the light blocking element.
Public/Granted literature
- US20150263055A1 SEMICONDUCTOR DEVICE WITH COMPRESSIVE LAYERS Public/Granted day:2015-09-17
Information query
IPC分类:
