Invention Grant
- Patent Title: Solution containment during buffer layer deposition
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Application No.: US14108193Application Date: 2013-12-16
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Publication No.: US09252318B2Publication Date: 2016-02-02
- Inventor: Jeffrey S. Britt , Scot Albright , Urs Schoop , Walter Stoss , Darren Verebelyi
- Applicant: Global Solar Energy, Inc. , Hanergy Hi-Tech Power (HK) Limited
- Applicant Address: HK West KL
- Assignee: Hanergy Hi-Tech Power (HK) Limited
- Current Assignee: Hanergy Hi-Tech Power (HK) Limited
- Current Assignee Address: HK West KL
- Agency: Kolisch Hartwell, P.C.
- Main IPC: B05D5/12
- IPC: B05D5/12 ; C23C14/54 ; H01L31/18 ; H01L31/0392 ; H01L31/0749
Abstract:
Improved methods and apparatus for forming thin-film layers of chalcogenide on a substrate web. Solutions containing the reactants for the chalcogenide layer may be contained substantially to the front surface of the web, controlling the boundaries of the reaction and avoiding undesired deposition of chalcogenide upon the back side of the web.
Public/Granted literature
- US20140099750A1 SOLUTION CONTAINMENT DURING BUFFER LAYER DEPOSITION Public/Granted day:2014-04-10
Information query
