Invention Grant
- Patent Title: Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device
- Patent Title (中): 外延膜成膜方法，真空处理装置，半导体发光元件制造方法，半导体发光元件和照明装置
-
Application No.: US13661948Application Date: 2012-10-26
-
Publication No.: US09252322B2Publication Date: 2016-02-02
- Inventor: Yoshiaki Daigo , Keiji Ishibashi
- Applicant: CANON ANELVA CORPORATION
- Applicant Address: JP Kawasaki-shi
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2010-105101 20100430
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L33/00 ; C23C16/458 ; C30B23/02 ; C30B29/40 ; H01L21/02 ; H01L33/18
Abstract:
The present invention provides: an epitaxial film forming method capable of fabricating a +c-polarity epitaxial film made of a Group III nitride semiconductor by sputtering; and a vacuum processing apparatus suitable for this epitaxial film forming method. In one embodiment of the present invention, a Group III nitride semiconductor thin film is epitaxially grown by sputtering on an α-Al2O3 substrate heated to a desired temperature by using a heater. First, the α-Al2O3 substrate is disposed on a substrate holder including the heater in such a way that the α-Al2O3 substrate is disposed away from the heater by a predetermined distance. Then, an epitaxial film of a Group III nitride semiconductor thin film is formed on the α-Al2O3 substrate in the state where the α-Al2O3 substrate is disposed away from the heater by the predetermined distance.
Public/Granted literature
Information query
IPC分类:
