Vertical Hall device with highly conductive node for electrically connecting first and second Hall effect regions. A vertical Hall device comprises a first Hall effect region and a different second Hall effect region, both in a common semiconductor body. The first and second Hall effect regions have a main face and an opposite face, respectively. A highly conductive opposite face node is in ohmic contact to the opposite face of the first Hall effect region and the opposite face of the second Hall effect region in the semiconductor body. The vertical Hall device also comprises a first pair of contacts in or at the main face of the first Hall effect region and a second pair of contacts in or at the main face of the second Hall effect region. A convex circumscribing contour of the second pair of contacts is disjoint from a convex circumscribing contour of the first pair of contacts. Alternative embodiments comprise a pair of contacts and an opposite face node contact.