Invention Grant
- Patent Title: Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof
- Patent Title (中): 具有开关层和中间电极层的电阻式开关器件及其形成方法
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Application No.: US13829941Application Date: 2013-03-14
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Publication No.: US09252359B2Publication Date: 2016-02-02
- Inventor: John R. Jameson, III , John E. Sanchez , Wei Ti Lee , Foroozan Sarah Koushan
- Applicant: Adesto Technologies Corporation
- Applicant Address: US CA Sunnyvale
- Assignee: Adesto Technologies Corporation
- Current Assignee: Adesto Technologies Corporation
- Current Assignee Address: US CA Sunnyvale
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00 ; H01L27/24

Abstract:
In one embodiment of the present invention, a resistive switching device includes a first electrode disposed over a substrate and coupled to a first potential node, a switching layer disposed over the first electrode, a conductive amorphous layer disposed over the switching layer, and a second electrode disposed on the conductive amorphous layer and coupled to a second potential node.
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