Invention Grant
US09252567B2 Surface-emitting laser element, atomic oscillator, and surface-emitting laser element testing method
有权
表面发射激光元件,原子振荡器和表面发射激光元件测试方法
- Patent Title: Surface-emitting laser element, atomic oscillator, and surface-emitting laser element testing method
- Patent Title (中): 表面发射激光元件,原子振荡器和表面发射激光元件测试方法
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Application No.: US14002882Application Date: 2012-03-14
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Publication No.: US09252567B2Publication Date: 2016-02-02
- Inventor: Shunichi Sato
- Applicant: Shunichi Sato
- Applicant Address: JP Tokyo
- Assignee: RICOH COMPANY, LTD.
- Current Assignee: RICOH COMPANY, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Cooper & Dunham LLP
- Priority: JP2011-059137 20110317; JP2011-255532 20111122
- International Application: PCT/JP2012/057250 WO 20120314
- International Announcement: WO2012/124821 WO 20120920
- Main IPC: H01S5/42
- IPC: H01S5/42 ; B82Y20/00 ; G04F5/14 ; H01S5/343 ; H03B17/00 ; H01S5/183 ; H01S5/40 ; H01S5/00

Abstract:
A disclosed surface-emitting laser element includes a lower DBR formed on a substrate, an active layer formed on the lower DBR, an upper DBR formed on the active layer, a wavelength-adjusting layer formed above the active layer, and a plurality of surface-emitting lasers configured to emit respective laser beams having different wavelengths by changing a thickness of the wavelength-adjusting layer. In the surface-emitting laser element, the wavelength-adjusting layer includes one of a first film having alternately layered GaInP and GaAsP and a second film having alternately layered GaInP and GaAs, the thickness of the wavelength-adjusting layer being changed by partially removing each of the alternating layers of a corresponding one of the first and second films.
Public/Granted literature
- US20130335155A1 SURFACE-EMITTING LASER ELEMENT, ATOMIC OSCILLATOR, AND SURFACE-EMITTING LASER ELEMENT TESTING METHOD Public/Granted day:2013-12-19
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