Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14184570Application Date: 2014-02-19
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Publication No.: US09252592B2Publication Date: 2016-02-02
- Inventor: Shih Yu Wang
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Main IPC: H02H7/125
- IPC: H02H7/125 ; H02H9/04

Abstract:
A semiconductor device includes a rectifier coupled between a circuit ground and a terminal for coupling to an external circuit, a transistor-enhanced current path coupled to the rectifier, and a switching circuit coupled to the transistor-enhanced current path and coupled between the terminal and the circuit ground. The switching circuit is configured to turn off the transistor-enhanced current path during normal operation, and turn on the transistor-enhanced current path when an electrostatic discharge occurs at the terminal.
Public/Granted literature
- US20150236500A1 Semiconductor Device Public/Granted day:2015-08-20
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