Invention Grant
- Patent Title: Oscillator having dual topology
- Patent Title (中): 具有双拓扑的振荡器
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Application No.: US14362279Application Date: 2012-12-06
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Publication No.: US09252705B2Publication Date: 2016-02-02
- Inventor: Emmanuel Chataigner , Sebastien Dedieu
- Applicant: ST-Ericsson SA
- Applicant Address: CH Plan-les-Ouates
- Assignee: ST-ERICSSON SA
- Current Assignee: ST-ERICSSON SA
- Current Assignee Address: CH Plan-les-Ouates
- Agency: Patent Portfolio Builders PLLC
- Priority: EP11306619 20111206
- International Application: PCT/EP2012/074716 WO 20121206
- International Announcement: WO2013/083735 WO 20130613
- Main IPC: H03B5/12
- IPC: H03B5/12 ; H03B5/36 ; H03B25/00

Abstract:
An oscillator (200, 300, 350) comprises a tank circuit (100), a first transistor (M1c) and a second transistor (M1r), and the second transistor (M1r) occupies an area of silicon that is smaller than an area of silicon occupied by the first transistor (M1c). A switching apparatus (Sw1 . . . Sw14) selects either one of a first oscillator topology and a second oscillator topology, where in the first oscillator topology, the tank circuit (100) is coupled to the first transistor (M1c) in a first feedback configuration to provide feedback around the first transistor (M1c), and in the second oscillator topology, the tank circuit (100) is coupled to the second transistor (M1r) in a second feedback configuration that is different to the first feedback configuration to provide feedback around the second transistor (M1r).
Public/Granted literature
- US20140327487A1 Oscillator Having Dual Topology Public/Granted day:2014-11-06
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