Invention Grant
- Patent Title: Plasma evaluation apparatus
- Patent Title (中): 等离子体评估装置
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Application No.: US14359970Application Date: 2012-10-22
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Publication No.: US09254397B2Publication Date: 2016-02-09
- Inventor: Hajime Sakakita , Yuzuru Ikehara , Satoru Kiyama
- Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Applicant Address: JP Tokyo
- Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee Address: JP Tokyo
- Agency: Pergament & Cepeda LLP
- Agent Milagros A. Cepeda; Edward D. Pergament
- Priority: JP2011-254516 20111122
- International Application: PCT/JP2012/077258 WO 20121022
- International Announcement: WO2013/077126 WO 20130530
- Main IPC: A61B18/04
- IPC: A61B18/04 ; A61N5/10 ; H05H1/00 ; A61B18/00 ; A61B17/00
Abstract:
The present invention provides a plasma evaluation system and method for evaluating plasma, including: a treatment target material and a weak current measurement unit including a resistor unit and a differential amplifier, wherein the treatment target material is connected to the weak current measurement unit via a treatment target side measurement terminal, the resistor unit of the weak current measurement unit is connected to a ground side of a plasma generation current source, and the system and method evaluate plasma by receiving plasma generated by a plasma treatment equipment with the treatment target material, measuring a current by measuring a voltage across resistors of the resistor unit through the differential amplifier, and measuring an output voltage of the plasma generation power source.
Public/Granted literature
- US20140312241A1 PLASMA EVALUATION APPARATUS Public/Granted day:2014-10-23
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