Invention Grant
- Patent Title: Methods of fabricating low melting point solder reinforced sealant and structures formed thereby
- Patent Title (中): 制造低熔点焊料增强密封剂和由此形成的结构的方法
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Application No.: US12655407Application Date: 2009-12-30
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Publication No.: US09254532B2Publication Date: 2016-02-09
- Inventor: Deepak V. Kulkarni , Carl L. Deppisch , Leonel R. Arana , Gregory S. Constable , Sriram Srinivasan
- Applicant: Deepak V. Kulkarni , Carl L. Deppisch , Leonel R. Arana , Gregory S. Constable , Sriram Srinivasan
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/12 ; H01L23/10 ; H01L23/34 ; B23K1/00 ; B23K3/08
Abstract:
Methods and associated structures of forming a package structure including forming a low melting point solder material on a solder resist opening location of an IHS keep out zone, forming a sealant in a non SRO keep out zone region; attaching the IHS to the sealant, and curing the sealant, wherein a solder joint is formed between the IHS and the low melting point solder material.
Public/Granted literature
- US20110159310A1 Methods of fabricating low melting point solder reinforced sealant and structures formed thereby Public/Granted day:2011-06-30
Information query
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