Invention Grant
- Patent Title: MEMS device with a capping substrate
- Patent Title (中): 具有封盖基板的MEMS器件
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Application No.: US13792617Application Date: 2013-03-11
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Publication No.: US09254998B2Publication Date: 2016-02-09
- Inventor: Chun-Wen Cheng , Chia-Huan Chu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: B81B3/00
- IPC: B81B3/00 ; B81C1/00

Abstract:
An integrated circuit device includes a dielectric layer disposed onto a first substrate, the dielectric layer having a sacrificial cavity formed therein. The circuit also includes a membrane layer formed onto the dielectric layer and suspended over the sacrificial cavity, and a capping substrate bonded to the membrane layer such that a second cavity is formed, the second cavity being connected to the sacrificial cavity though a via formed into the membrane layer.
Public/Granted literature
- US20140252508A1 MEMS Device with a Capping Substrate Public/Granted day:2014-09-11
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