Invention Grant
US09255000B2 CMOS integrated moving-gate transducer with silicon as a functional layer
有权
CMOS集成式移动栅极换能器，以硅为功能层
- Patent Title: CMOS integrated moving-gate transducer with silicon as a functional layer
- Patent Title (中): CMOS集成式移动栅极换能器，以硅为功能层
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Application No.: US14108901Application Date: 2013-12-17
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Publication No.: US09255000B2Publication Date: 2016-02-09
- Inventor: Ando Lars Feyh , Po-Jui Chen , Markus Ulm
- Applicant: Robert Bosch GmbH
- Applicant Address: US DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: US DE Stuttgart
- Agency: Maginot Moore & Beck LLP
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L21/50 ; B81C1/00 ; B81B3/00 ; B81B7/00 ; H01L29/772 ; H01L21/02 ; H01L21/58
Abstract:
A semiconductor device includes a substrate, a first dielectric layer located above the substrate, a moving-gate transducer, and a proof mass. The moving-gate transducer is at least partially formed within the substrate and is at least partially formed within the first dielectric layer. The proof mass includes a portion of the first dielectric layer and a portion of a silicon layer. The silicon layer is located above the first dielectric layer.
Public/Granted literature
- US20140175525A1 CMOS Integrated Moving-Gate Transducer with Silicon as a Functional Layer Public/Granted day:2014-06-26
Information query
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