Invention Grant
US09255323B2 Sputtering target including a feature to reduce chalcogen build up and arcing on a backing tube
有权
溅射目标包括减少硫属元素在背衬管上积聚和起弧的特征
- Patent Title: Sputtering target including a feature to reduce chalcogen build up and arcing on a backing tube
- Patent Title (中): 溅射目标包括减少硫属元素在背衬管上积聚和起弧的特征
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Application No.: US13525593Application Date: 2012-06-18
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Publication No.: US09255323B2Publication Date: 2016-02-09
- Inventor: Robert Martinson , Heinrich Von Bunau , Mark Campello , Ron Rulkens , Tom Heckel , Johannes Vlcek
- Applicant: Robert Martinson , Heinrich Von Bunau , Mark Campello , Ron Rulkens , Tom Heckel , Johannes Vlcek
- Applicant Address: CN Quanzhou
- Assignee: APOLLO PRECISION FUJIAN LIMITED
- Current Assignee: APOLLO PRECISION FUJIAN LIMITED
- Current Assignee Address: CN Quanzhou
- Agency: The Marbury Law Group PLLC
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/34 ; H01L31/18 ; H01L31/032 ; C23C14/06
Abstract:
A sputtering target has a cylindrical backing tube having two edges and a sidewall comprising a middle portion located between two end portions. The sputtering material is on the backing tube. The sputtering material does not cover at least one end portion of the backing tube. The sputtering target also has a feature which prevents or reduces at least one of chalcogen buildup and arcing at the at least one end portion of the backing tube not covered by the sputtering material.
Public/Granted literature
- US20130337602A1 Sputtering Target Including a Feature to Reduce Chalcogen Build Up and Arcing on a Backing Tube Public/Granted day:2013-12-19
Information query
IPC分类:
