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US09255326B2 Systems and methods for remote plasma atomic layer deposition 有权
远程等离子体原子层沉积的系统和方法

Systems and methods for remote plasma atomic layer deposition
Abstract:
Systems and methods deposit a film on a substrate by introducing a precursor gas into a reaction volume of a processing chamber. A substrate is arranged in the reaction volume. After a predetermined soak period, the precursor gas is purged from the reaction volume. The substrate is exposed with plasma gas using a remote plasma source.
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