Invention Grant
- Patent Title: Modulated ion-induced atomic layer deposition (MII-ALD)
- Patent Title (中): 调制离子诱导原子层沉积（MII-ALD）
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Application No.: US12510922Application Date: 2009-07-28
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Publication No.: US09255329B2Publication Date: 2016-02-09
- Inventor: Tony P. Chiang , Karl Leeser
- Applicant: Tony P. Chiang , Karl Leeser
- Applicant Address: US CA Fremont
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H05H1/46
- IPC: H05H1/46 ; C23C16/06 ; C23C16/455 ; C23C16/22 ; C23C16/46 ; H01L21/285 ; H01L21/768
Abstract:
The present invention relates to a cyclic deposition process suitable for depositing an elemental film. The process employs an enhanced atomic layer deposition technique.
Public/Granted literature
- US20100055342A1 MODULATED ION-INDUCED ATOMIC LAYER DEPOSITION (MII-ALD) Public/Granted day:2010-03-04
Information query
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