Invention Grant
- Patent Title: Temperature detection circuit and method of adjusting the same
- Patent Title (中): 温度检测电路及其调整方法
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Application No.: US13659973Application Date: 2012-10-25
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Publication No.: US09255850B2Publication Date: 2016-02-09
- Inventor: Shuji Furuichi
- Applicant: LAPIS Semiconductor Co., Ltd.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2011-247732 20111111
- Main IPC: G01K7/00
- IPC: G01K7/00 ; G01K7/01 ; G01K15/00

Abstract:
A temperature detection circuit that can detect temperature with high accuracy regardless of manufacturing variations, and a method of adjusting the same. The circuit includes: first and second diodes having respective independent p-n junctions; a first current path including a first variable voltage dividing resistor series connected to the first diode; a second current path including a second variable voltage dividing resistor series connected to the second diode; a reference voltage generation part that feeds back a differential voltage to each of the first and second current paths and outputs as a reference voltage the differential voltage indicating a difference between a first divided voltage of the first variable voltage dividing resistor and a potential on the second current path; and a temperature detection signal generation part generating a temperature detection signal based on a second divided voltage of the second variable voltage dividing resistor.
Public/Granted literature
- US20130121377A1 TEMPERATURE DETECTION CIRCUIT AND METHOD OF ADJUSTING THE SAME Public/Granted day:2013-05-16
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