Invention Grant
- Patent Title: Monolithic FBAR-CMOS structure such as for mass sensing
- Patent Title (中): 单片FBAR-CMOS结构,如用于质量感测
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Application No.: US13283670Application Date: 2011-10-28
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Publication No.: US09255912B2Publication Date: 2016-02-09
- Inventor: Matthew Johnston , Kenneth Shepard , Ioannis Kymissis
- Applicant: Matthew Johnston , Kenneth Shepard , Ioannis Kymissis
- Applicant Address: US NY New York
- Assignee: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
- Current Assignee: THE TRUSTEES OF COLUMBIA UNIVERSITY IN THE CITY OF NEW YORK
- Current Assignee Address: US NY New York
- Agency: Baker Botts L.L.P.
- Main IPC: G01N29/24
- IPC: G01N29/24 ; G01N29/02 ; G01N29/036 ; H03B5/36 ; H03H9/17 ; H03H9/54

Abstract:
An apparatus comprises a thin-film bulk acoustic resonator such as including an acoustic mirror, a piezoelectric region acoustically coupled to the acoustic mirror, and first and second conductors electrically coupled to the piezoelectric region. In an example, an integrated circuit substrate can include an interface circuit connected to the first and second conductors of the resonator, the integrated circuit substrate configured to mechanically support the resonator. An example can include an array of such resonators co-integrated with the interface circuit and configured to detect a mass change associated with one or more of a specified protein binding, a specified antibody-antigen coupling, a specified hybridization of a DNA oligomer, or an adsorption of specified gas molecules.
Public/Granted literature
- US20120164753A1 MONOLITHIC FBAR-CMOS STRUCTURE SUCH AS FOR MASS SENSING Public/Granted day:2012-06-28
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