Invention Grant
- Patent Title: Phase-shift blankmask and method for fabricating the same
- Patent Title (中): 相移掩模及其制造方法
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Application No.: US13864624Application Date: 2013-04-17
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Publication No.: US09256119B2Publication Date: 2016-02-09
- Inventor: Kee-Soo Nam , Geung-Won Kang , Dong-Geun Kim , Jong-Won Jang , Min-Ki Choi
- Applicant: S&S TECH Co., Ltd.
- Applicant Address: KR Daegu-si
- Assignee: S & S Tech Co., Ltd
- Current Assignee: S & S Tech Co., Ltd
- Current Assignee Address: KR Daegu-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0045404 20120430; KR10-2013-0008329 20130125
- Main IPC: G03F1/26
- IPC: G03F1/26

Abstract:
Provided is a phase-shift blankmask in which a phase-shift layer is formed in at least two continuous layers or a multi-layer film and an uppermost phase-shift layer included in the phase-shift layer is thinly formed to contain a small amount of oxygen (O) so as to enhance chemical resistance and durability thereof.Accordingly, a phase-shift blankmask including the phase-shift layer having enhanced chemical resistance and durability with respect to a cleaning solution containing acid and basic materials, hot deionized water, or ozone water, which is used in a cleaning process that is repeatedly performed during manufacture of a photomask, may be provided using the uppermost phase-shift layer having the enhanced chemical resistance and durability.Furthermore, degradation in the refractive index and degree of phase shift of the phase-shift layer, caused when the cleaning process is repeatedly performed may be prevented due to the uppermost phase-shift layer having the enhanced chemical resistance and durability. Accordingly, a phase-shift blankmask including a thin phase-shift layer can be provided.
Public/Granted literature
- US20130288165A1 PHASE-SHIFT BLANKMASK AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-10-31
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