Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14490517Application Date: 2014-09-18
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Publication No.: US09256128B2Publication Date: 2016-02-09
- Inventor: Ching-Yu Chang , Chen-Yu Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G03F7/11
- IPC: G03F7/11 ; H01L21/027 ; C08F220/18 ; H01L21/02 ; H01L21/311 ; C08F220/22 ; G03F7/40 ; G03F7/42 ; C11D11/00

Abstract:
A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom. The anti-reflective layers are removed using a fluid.
Public/Granted literature
- US20150111384A1 Anti-Reflective Layer and Method Public/Granted day:2015-04-23
Information query
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